Invention Grant
- Patent Title: Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device
-
Application No.: US14572872Application Date: 2014-12-17
-
Publication No.: US10014383B2Publication Date: 2018-07-03
- Inventor: Jens Peter Konrath , Hans-Joachim Schulze , Reinhold Schoerner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/47
- IPC: H01L29/47 ; H01L29/872 ; H01L29/66 ; H01L21/285 ; H01L21/04 ; H01L29/06 ; H01L21/3215 ; H01L21/02 ; H01L21/223 ; H01L21/266 ; H01L21/268 ; H01L29/16 ; H01L29/20 ; H01L29/22
Abstract:
A method of manufacturing a semiconductor device includes introducing nitrogen into a metal layer or into a metal nitride layer, the metal layer or metal nitride layer being formed in contact with a semiconductor material. A semiconductor device includes a semiconductor material and a metal nitride layer in contact with the semiconductor material. The metal nitride has a nitrogen content larger than a solubility limit of nitrogen in the metal nitride.
Public/Granted literature
Information query
IPC分类:
