Invention Grant
- Patent Title: Semiconductor device with passivation layer for control of leakage current
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Application No.: US15414156Application Date: 2017-01-24
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Publication No.: US10014401B2Publication Date: 2018-07-03
- Inventor: Jeho Na , Hyung Seok Lee , Chi Hoon Jun , Sang Choon Ko , Myungjoon Kwack , Young Rak Park , Woojin Chang , Hyun-Gyu Jang , Dong Yun Jung
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2016-0008938 20160125; KR10-2016-0101508 20160809
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L23/31 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.
Public/Granted literature
- US20170213904A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2017-07-27
Information query
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