Invention Grant
- Patent Title: Method for producing semiconductor light-emitting device
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Application No.: US15118912Application Date: 2015-02-06
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Publication No.: US10014451B2Publication Date: 2018-07-03
- Inventor: Shohei Hotta , Masayuki Takashima
- Applicant: Sumitomo Chemical Company, Limited
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Chemical Company, Limited
- Current Assignee: Sumitomo Chemical Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Priority: JP2014-028203 20140218; JP2014-028204 20140218
- International Application: PCT/JP2015/054051 WO 20150206
- International Announcement: WO2015/125713 WO 20150827
- Main IPC: H01L33/56
- IPC: H01L33/56 ; H01L33/62

Abstract:
A method for producing a semiconductor light-emitting device containing a substrate, an element and an encapsulating material as constituent members is provided. The method involves providing the substrate with the element; potting at least one encapsulating material (i) before curing selected from addition polymerization-type encapsulating materials and polycondensation-type encapsulating materials onto the substrate to cover the element; curing the potted encapsulating material (i); potting a polycondensation-type encapsulating material (ii) before curing onto the encapsulating material (i) after curing which covers the element, and then curing the potted polycondensation-type encapsulating material (ii), thereby laminating the encapsulating material. A semiconductor light-emitting device produced by the method is also provided, in which two or more layers each containing the encapsulating material are laminated.
Public/Granted literature
- US20160359092A1 METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2016-12-08
Information query
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