Invention Grant
- Patent Title: Composition for forming gate insulating film, organic thin film transistor, electronic paper, and display device
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Application No.: US14955698Application Date: 2015-12-01
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Publication No.: US10014474B2Publication Date: 2018-07-03
- Inventor: Yasuaki Matsushita , Tokihiko Matsumura
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-120985 20130607
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C07F9/145 ; C08L33/14 ; H01L51/05

Abstract:
The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).
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Information query
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