Invention Grant
- Patent Title: Manufacturing apparatus of high purity MOx nanostructure and method of manufacturing the same
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Application No.: US14767578Application Date: 2013-02-13
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Publication No.: US10014523B2Publication Date: 2018-07-03
- Inventor: Bo-Yun Jang , Joon-Soo Kim , Jin-Seok Lee
- Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
- Applicant Address: KR Daejeon
- Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee Address: KR Daejeon
- Agency: Hauptman Ham, LLP
- Priority: KR10-2013-0015197 20130213
- International Application: PCT/KR2013/001110 WO 20130213
- International Announcement: WO2014/126273 WO 20140821
- Main IPC: H01M4/48
- IPC: H01M4/48 ; C23C16/22 ; C23C16/455 ; H01M4/04 ; B82Y40/00 ; H01M4/02

Abstract:
There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.
Public/Granted literature
- US20160020463A1 MANUFACTURING APPARATUS OF HIGH PURITY MOx NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-01-21
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