- Patent Title: MEMS integrated pressure sensor devices and methods of forming same
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Application No.: US15043850Application Date: 2016-02-15
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Publication No.: US10017382B2Publication Date: 2018-07-10
- Inventor: Chia-Hua Chu , Chun-Wen Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00 ; B81B3/00 ; G01C19/56 ; G01P15/00 ; G01L19/00 ; G01L9/00 ; G01P15/08 ; G01P15/125 ; B81B7/04 ; G01C19/5769 ; B81B7/02 ; B81B7/00

Abstract:
A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
Public/Granted literature
- US20160159644A1 MEMS Integrated Pressure Sensor Devices and Methods of Forming Same Public/Granted day:2016-06-09
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