Invention Grant
- Patent Title: Processing method of silicon nitride film and forming method of silicon nitride film
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Application No.: US15615945Application Date: 2017-06-07
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Publication No.: US10017853B2Publication Date: 2018-07-10
- Inventor: Toshio Nakanishi , Daisuke Katayama
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2016-117832 20160614
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L29/51 ; H01L21/475 ; C23C16/34 ; C23C16/46 ; C23C16/511 ; C23C16/56
Abstract:
A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.
Public/Granted literature
- US20170356084A1 PROCESSING METHOD OF SILICON NITRIDE FILM AND FORMING METHOD OF SILICON NITRIDE FILM Public/Granted day:2017-12-14
Information query
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