Invention Grant
- Patent Title: Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor
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Application No.: US13690263Application Date: 2012-11-30
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Publication No.: US10017874B2Publication Date: 2018-07-10
- Inventor: Takeshi Kijima , Yuuji Honda , Daisuke Iitsuka , Kenjirou Hata
- Applicant: YOUTEC CO., LTD. , SAE Magnetics (H.K.) Ltd.
- Applicant Address: JP Chiba HK Shatin, N.T.
- Assignee: YOUTEC CO., LTD.,SAE MAGNETICS (H.K.) LTD.
- Current Assignee: YOUTEC CO., LTD.,SAE MAGNETICS (H.K.) LTD.
- Current Assignee Address: JP Chiba HK Shatin, N.T.
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2012-127046 20120604
- Main IPC: C30B1/02
- IPC: C30B1/02 ; C30B23/08 ; C30B29/22 ; C30B29/68 ; C30B7/06 ; C30B23/02 ; H01L41/318 ; H01L41/319
Abstract:
There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.
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