Disclosed is a phase-shift blankmask for manufacturing a photomask, which can achieve a fine pattern of not greater than 32 nm, preferably not greater than 14 nm, and more preferably not greater than 10 nm.To this end, a phase-shift film, a light-shielding film, an etch-stopping film and a hard film are provided on a transparent substrate, in which the light-shielding film has a multi-layered structure of two or more layers different in composition, one of which essentially contains oxygen (O), a light-shielding layer essentially having oxygen (O) occupies 50%˜100% of the whole thickness of the light-shielding film, and the phase-shift film has a transmissivity of 10%˜50%.