Invention Grant
- Patent Title: Chemically amplified resist material and resist pattern-forming method
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Application No.: US15347033Application Date: 2016-11-09
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Publication No.: US10018911B2Publication Date: 2018-07-10
- Inventor: Hisashi Nakagawa , Takehiko Naruoka , Tomoki Nagai
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-219984 20151109; JP2016-156025 20160808; JP2016-217575 20161107
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/16 ; G03F7/039 ; G03F7/20 ; C07C381/12 ; G03F7/38 ; H01L21/027 ; C07D307/77 ; C08F220/38 ; C08F220/18 ; C08F220/26 ; C08F220/24 ; C08F220/22

Abstract:
A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.
Public/Granted literature
- US20170131633A1 CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD Public/Granted day:2017-05-11
Information query
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