Invention Grant
- Patent Title: Stack refresh control for memory device
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Application No.: US15449688Application Date: 2017-03-03
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Publication No.: US10020046B1Publication Date: 2018-07-10
- Inventor: Yutaka Uemura
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/406 ; G11C11/4091 ; G11C11/408

Abstract:
Apparatuses and methods for self-refreshing a plurality of dies are described. An example apparatus includes a first die including a first bank and a second bank, the first bank and the second bank including memory cells; and a second die vertically stacked with the first die, the second die including a third bank and a fourth bank, the third bank and the fourth bank including memory cells. The third bank is vertically aligned with the first bank. The first bank and the fourth bank are configured to be refreshed prior to refreshing the second bank and the fourth bank.
Information query