Invention Grant
- Patent Title: Method for cleaning substrate
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Application No.: US15454134Application Date: 2017-03-09
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Publication No.: US10020184B2Publication Date: 2018-07-10
- Inventor: Shih-Ping Hong , Yu-Cheng Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3213 ; H01L21/311 ; H01L21/67 ; H01J37/32 ; B08B7/00 ; B08B9/08
Abstract:
A method for cleaning a substrate is provided. The method includes providing a substrate. Metal compound residues are formed over the substrate. The method includes exposing the substrate to an organic plasma to volatilize the metal compound residues. The organic plasma is generated from a gas. The gas includes an organic gas, and the organic gas is made of a hydrocarbon compound or an alcohol compound.
Public/Granted literature
- US20170178895A1 METHOD FOR CLEANING SUBSTRATE Public/Granted day:2017-06-22
Information query
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