Techniques disclosed herein provide a method and fabrication structure for pitch reduction for creating high-resolution features and also for cutting on pitch of sub-resolution features. Techniques include using multiple materials having different etch characteristics to selectively etch features and create cuts or blocks where specified. A pattern of alternating materials is formed on an underlying layer. An etch mask is positioned on the pattern of alternating materials. One or more of the alternating materials can be preferentially removed relative to other materials to uncover a portion of the underlying layer. The etch mask and the remaining lines of alternating material together form a combined etch mask defining sub-resolution features.