Invention Grant
- Patent Title: Power semiconductor module and method for producing a power semiconductor module
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Application No.: US14925274Application Date: 2015-10-28
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Publication No.: US10020237B2Publication Date: 2018-07-10
- Inventor: Alexander Hoehn , Georg Borghoff
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014115847 20141030
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/15 ; H01L23/053 ; H01L21/48 ; H01L23/498 ; H05K5/00

Abstract:
A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. The power semiconductor module also has an electrically conductive terminal block connected firmly and electrically conductively to the circuit carrier and/or to the semiconductor component. The terminal block has a screw thread that is accessible from an outer side of the module housing. A method for producing such a power semiconductor module is also provided.
Public/Granted literature
- US20160126154A1 Power Semiconductor Module and Method for Producing a Power Semiconductor Module Public/Granted day:2016-05-05
Information query
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