Invention Grant
- Patent Title: Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method
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Application No.: US15279649Application Date: 2016-09-29
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Publication No.: US10020270B2Publication Date: 2018-07-10
- Inventor: Helmut Brech , Albert Birner , Matthias Zigldrum , Michaela Braun , Jan Ropohl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L29/78 ; H01L23/48 ; H01L49/02 ; H01L21/768 ; H03F3/193 ; H03F3/21
Abstract:
In an embodiment, a semiconductor device includes a semiconductor substrate including a front surface, an LDMOS transistor structure in the front surface, a conductive interconnection structure arranged on the front surface, and at least one cavity arranged in the front surface.
Public/Granted literature
- US20180090455A1 Semiconductor Device Including a LDMOS Transistor, Monolithic Microwave Integrated Circuit and Method Public/Granted day:2018-03-29
Information query
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