Invention Grant
- Patent Title: Bottle-neck recess in a semiconductor device
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Application No.: US14732493Application Date: 2015-06-05
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Publication No.: US10020397B2Publication Date: 2018-07-10
- Inventor: Eric Peng , Chao-Cheng Chen , Chii-Horng Li , Ming-Hua Yu , Shih-Hao Lo , Syun-Ming Jang , Tze-Liang Lee , Ying Hao Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/306 ; H01L21/3065 ; H01L29/165 ; H01L29/66
Abstract:
A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.
Public/Granted literature
- US20150270397A1 BOTTLE-NECK RECESS IN A SEMICONDUCTOR DEVICE Public/Granted day:2015-09-24
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