A light emitting semiconductor device (401) has an active region (405) formed of Bismuth (Bi) and one or more other group V elements. In a particular embodiment the III-V material comprises Gallium Arsenide (GaAs) in addition to Bismuth. The inclusion of Bismuth in the III-V material raises the spin-orbit splitting energy of the material while reducing the band gap. When the spin-orbit splitting energy exceeds the band gap, Auger recombination processes are inhibited, reducing the sensitivity of the light emitting semiconductor device (401) to changes in ambient temperature.