Invention Grant
- Patent Title: Low phase shift, high frequency attenuator
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Application No.: US15683451Application Date: 2017-08-22
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Publication No.: US10020798B2Publication Date: 2018-07-10
- Inventor: Vikas Sharma
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jacquez, Esq.; John Land, Esq.
- Main IPC: H03H7/24
- IPC: H03H7/24 ; H03H11/24 ; H03H11/28

Abstract:
A wideband RF attenuator circuit that has a reduced impact on the phase of an applied signal when switched between an attenuation state and a non-attenuating reference or bypass state. A low phase shift attenuation at high RF frequencies can be achieved by utilizing a switched signal path attenuator topology with multiple distributed transmission line elements per signal path to provide broadband operation, distribute parasitic influences, and improve isolation to achieve higher attenuation at higher frequencies while still maintaining low phase shift operational characteristics. In an alternative embodiment, extension to even higher frequencies can be achieved by utilizing a quarter-wave transmission line element at the signal interfaces of each signal path, thereby improving insertion loss and power handling.
Public/Granted literature
- US20180123566A1 Low Phase Shift, High Frequency Attenuator Public/Granted day:2018-05-03
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