Invention Grant
- Patent Title: Monomer, polymer, resist composition, and patterning process
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Application No.: US15426227Application Date: 2017-02-07
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Publication No.: US10023674B2Publication Date: 2018-07-17
- Inventor: Masayoshi Sagehashi , Masahiro Fukushima , Koji Hasegawa , Teppei Adachi , Kazuhiro Katayama , Jun Hatakeyama
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2016-023878 20160210
- Main IPC: G03F7/004
- IPC: G03F7/004 ; C08F222/20 ; C07C69/675 ; C08F220/28 ; G03F7/038 ; G03F7/16 ; G03F7/20 ; G03F7/38 ; G03F7/32 ; C08F220/24 ; C07C381/12 ; C08F220/18 ; C08F220/30
Abstract:
A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.
Public/Granted literature
- US20170226252A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS Public/Granted day:2017-08-10
Information query
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