Invention Grant
- Patent Title: Cleaning composition for semiconductor substrate and cleaning method
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Application No.: US15590326Application Date: 2017-05-09
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Publication No.: US10023827B2Publication Date: 2018-07-17
- Inventor: Kenji Mochida , Motoyuki Shima
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-157071 20140731
- Main IPC: C11D11/00
- IPC: C11D11/00 ; C11D3/37 ; C11D7/50 ; B08B7/00 ; C08F120/18 ; C08F120/24 ; C08F120/28 ; C08F132/08 ; C08K5/092 ; C11D3/20 ; C11D3/24 ; C11D3/43 ; H01L21/02

Abstract:
A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.
Public/Granted literature
- US20170240851A1 CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD Public/Granted day:2017-08-24
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