Invention Grant
- Patent Title: Resist pattern-forming method
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Application No.: US15440299Application Date: 2017-02-23
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Publication No.: US10025188B2Publication Date: 2018-07-17
- Inventor: Yusuke Anno , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
- Applicant: JSR Corporation
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-202361 20100909; JP2011-181004 20110822
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/075 ; G03F7/09 ; G03F7/16 ; G03F7/20 ; G03F7/30 ; G03F7/32
Abstract:
A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
Public/Granted literature
- US20170322492A1 RESIST PATTERN-FORMING METHOD Public/Granted day:2017-11-09
Information query
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