Invention Grant
- Patent Title: Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration
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Application No.: US14589738Application Date: 2015-01-05
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Publication No.: US10025885B2Publication Date: 2018-07-17
- Inventor: Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06G7/48
- IPC: G06G7/48 ; G06F17/50 ; G03F1/00 ; G03F1/44 ; G03F7/20 ; G06F17/10 ; G03F1/68

Abstract:
Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
Public/Granted literature
- US20150186557A1 METHODS AND SYSTEMS FOR PARAMETER-SENSITIVE AND ORTHOGONAL GAUGE DESIGN FOR LITHOGRAPHY CALIBRATION Public/Granted day:2015-07-02
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