Invention Grant
- Patent Title: Double pinned magnetoresistance element with temporary ferromagnetic layer to improve annealing
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Application No.: US15639281Application Date: 2017-06-30
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Publication No.: US10026425B2Publication Date: 2018-07-17
- Inventor: Paolo Campiglio
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US NH Manchester
- Assignee: Allegro MicroSystems, LLC
- Current Assignee: Allegro MicroSystems, LLC
- Current Assignee Address: US NH Manchester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A double pinned magnetoresistance element has a temporary ferromagnetic layer, two PtMn antiferromagnetic pinning layers, and two associated synthetic antiferromagnetic (SAF) pinned layer structures, the temporary ferromagnetic layer operable to improve annealing of the two PtMn antiferromagnetic pinning layers and the two associated SAFs to two different magnetic directions that are a relative ninety degrees apart.
Public/Granted literature
- US20180062072A1 Double Pinned Magnetoresistance Element With Temporary Ferromagnetic Layer To Improve Annealing Public/Granted day:2018-03-01
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