Invention Grant
- Patent Title: Magnetic tunnel junction (MTJ) free layer damping reduction
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Application No.: US15884480Application Date: 2018-01-31
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Publication No.: US10026426B2Publication Date: 2018-07-17
- Inventor: Zheng Gao , James Mac Freitag
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Foley & Lardner LLP
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H01L43/02 ; H01L27/22 ; G11C11/16 ; H01L43/10

Abstract:
In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.
Public/Granted literature
- US20180151193A1 MAGNETIC TUNNEL JUNCTION (MTJ) FREE LAYER DAMPING REDUCTION Public/Granted day:2018-05-31
Information query
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