Magnetic tunnel junction (MTJ) free layer damping reduction
Abstract:
In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.
Public/Granted literature
Information query
Patent Agency Ranking
0/0