Invention Grant
- Patent Title: Switch contact element and its preparation method
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Application No.: US14896405Application Date: 2014-11-12
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Publication No.: US10026565B2Publication Date: 2018-07-17
- Inventor: Huisheng Han , Hongmei Zhang , Yuan Chen , Yang Ding , Guoqiang Wu
- Applicant: NANTONG MEMTECH TECHNOLOGIES CO., LTD.
- Applicant Address: CN Nantong
- Assignee: NANTONG MEMTECH TECHNOLOGY CO., LTD.
- Current Assignee: NANTONG MEMTECH TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Nantong
- Agency: Treasure IP Group, LLC
- Priority: CN201310748955 20131231
- International Application: PCT/CN2014/090915 WO 20141112
- International Announcement: WO2015/101110 WO 20150709
- Main IPC: H01H1/02
- IPC: H01H1/02 ; H01H1/021 ; H01H1/06 ; H01H11/04 ; C23C18/31 ; C23F1/16 ; C23F1/32 ; C25D3/12 ; C25D3/48 ; C25D7/00 ; C08J5/12 ; B32B15/06 ; B32B15/18 ; B32B15/20 ; B32B25/20

Abstract:
A switch contact element, having a layered structure comprising three layers: the bottom layer is silicone rubber, the middle layer is a continuous base metal sheet layer, and the upper layer is a discontinuous (stripe-shaped, raised-point-shaped or lattice-shaped) precious metal plated layer or a double-metal composite layer of a discontinuous base metal plated layer and a precious metal plated layer. The thickness of the bottom layer is greater than that of the middle layer, the thickness of the middle layer is greater than that of the upper layer, and the thickness of the upper layer meets the conditions that the conductive current is greater than safe current of conductive contacts on a circuit board, and the service life of a switch for the design is ensured.
Public/Granted literature
- US20160126024A1 Switch Contact Element and Its Preparation Method Public/Granted day:2016-05-05
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