Invention Grant
- Patent Title: Method of reducing stress in metal film and metal film forming method
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Application No.: US15165524Application Date: 2016-05-26
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Publication No.: US10026616B2Publication Date: 2018-07-17
- Inventor: Kenji Suzuki , Takanobu Hotta , Koji Maekawa , Yasushi Aiba
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2015-108432 20150528
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; C23C16/455 ; C23C16/02 ; C23C16/14 ; H01L21/321 ; H01L21/3205
Abstract:
There is provided a method of reducing stress in a metal film that is highly stressed, the method including: processing the metal film by supplying a metal chloride gas containing a metal of the metal film and a reduction gas for reducing the metal chloride gas onto the metal film; and forming a process film on the metal film to reduce stress in the metal film.
Public/Granted literature
- US20160351402A1 METHOD OF REDUCING STRESS IN METAL FILM AND METAL FILM FORMING METHOD Public/Granted day:2016-12-01
Information query
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