Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US15253827Application Date: 2016-08-31
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Publication No.: US10026622B2Publication Date: 2018-07-17
- Inventor: Mitsuhiro Omura , Tsubasa Imamura , Itsuko Sakai
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2016-052770 20160316
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L27/115 ; H01L21/67 ; H01L21/3213
Abstract:
According to one embodiment, a method for manufacturing a semiconductor device includes forming a hole extending in a first direction in a workpiece. The method includes forming a first film on an upper surface of the workpiece and an upper portion of a side wall of the hole. The method includes forming a second film on the first film. The method includes removing portions of the first and second films from the upper surface of the workpiece so that at least a part of the first and second films formed on the upper portion remain. The method includes removing at least a part of a portion of the workpiece which is exposed through the hole using a second etchant. An etching rate of the first etchant for the first film is higher than an etching rate of the first etchant for the second film.
Public/Granted literature
- US20170271170A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-09-21
Information query
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