Invention Grant
- Patent Title: Semiconductor substrate cleaning method and cleaning system
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Application No.: US14432818Application Date: 2013-09-30
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Publication No.: US10026628B2Publication Date: 2018-07-17
- Inventor: Yuichi Ogawa , Haruyoshi Yamakawa
- Applicant: KURITA WATER INDUSTRIES LTD.
- Applicant Address: JP Tokyo
- Assignee: KURITA WATER INDUSTRIES LTD.
- Current Assignee: KURITA WATER INDUSTRIES LTD.
- Current Assignee Address: JP Tokyo
- Agency: Scarinci & Hollenbeck
- Priority: JP2012-220816 20121002
- International Application: PCT/JP2013/076529 WO 20130930
- International Announcement: WO2014/054576 WO 20140410
- Main IPC: C23G1/02
- IPC: C23G1/02 ; H01L21/67 ; H01L21/02 ; H01L21/3213 ; H01L21/285

Abstract:
The present invention relates to a method and a system for cleaning a semiconductor substrate wherein Al is at last partially exposed on a silicon substrate and silicided with a metallic substance without damaging the Al and a silicide layer. A cleaning portion cleans the aforementioned semiconductor substrate. A delivery portion, disposed on the cleaning portion, delivers a solution to the semiconductor substrate. A sulfuric acid solution transfer path connected onto the delivery portion transfers a sulfuric acid solution and an adsorptive inhibitor solution transfer path connected to the delivery path transfers an adsorptive inhibitor having any one or more of N-based, S-based, and P-based polar groups to the delivery portion. The sulfuric acid solution and the adsorptive inhibitor may be mixed or separately transferred to come into contact with the semiconductor substrate.
Public/Granted literature
- US20150279703A1 Semiconductor Substrate Cleaning Method and Cleaning System Public/Granted day:2015-10-01
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