Invention Grant
- Patent Title: Singulation of ion-exchanged substrates
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Application No.: US15629506Application Date: 2017-06-21
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Publication No.: US10026651B1Publication Date: 2018-07-17
- Inventor: Scott J. Limb
- Applicant: Palo Alto Research Center Incorporated
- Applicant Address: US CA Palo Alto
- Assignee: Palo Alto Research Center Incorporated
- Current Assignee: Palo Alto Research Center Incorporated
- Current Assignee Address: US CA Palo Alto
- Agency: Hollingsworth Davis, LLC
- Main IPC: H01L21/301
- IPC: H01L21/301 ; H01L21/78 ; H01L23/00 ; H01L21/228 ; C03C21/00 ; H01L21/02

Abstract:
A method of making a substrate involves patterning the substrate into active areas and dicing lanes. After the substrate is patterned one or more stress layers are formed the substrate. A change in stress along a thickness of the substrate in the active areas is larger than a change in stress along the thickness of the substrate in the dicing lanes. The substrate is subsequently diced along the dicing lanes.
Information query
IPC分类: