Invention Grant
- Patent Title: FinFET-based ESD devices and methods for forming the same
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Application No.: US15418997Application Date: 2017-01-30
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Publication No.: US10026727B2Publication Date: 2018-07-17
- Inventor: Wun-Jie Lin , Ching-Hsiung Lo , Jen-Chou Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/02 ; H01L21/8234 ; H01L27/088 ; H01L29/423 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/285 ; H01L21/768 ; H01L23/535 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/161

Abstract:
A device includes a plurality of STI regions, a plurality of semiconductor strips between the STI regions and parallel to each other, and a plurality of semiconductor fins over the semiconductor strips. A gate stack is disposed over and crossing the plurality of semiconductor fins. A drain epitaxy semiconductor region is disposed on a side of the gate stack and connected to the plurality of semiconductor fins. The drain epitaxy semiconductor region includes a first portion adjoining the semiconductor fins, wherein the first portion forms a continuous region over and aligned to the plurality of semiconductor strips. The drain epitaxy semiconductor region further includes second portions farther away from the gate stack than the first portion. Each of the second portions is over and aligned to one of the semiconductor strips. The second portions are parallel to each other, and are separated from each other by a dielectric material.
Public/Granted literature
- US20170141098A1 FinFET-Based ESD Devices and Methods for Forming the Same Public/Granted day:2017-05-18
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