A semiconductor memory device includes a stacked body including a plurality of word lines; a semiconductor layer extending through the word lines; a memory cell provided at a part where the semiconductor layer crosses one of the word lines, the memory cell including a plurality of cell layers, the cell layers including a first insulating layer; and at least one of a first structural body and a second structural body provided around the stacked body. The first structural body includes a plurality of monitor layers including same materials respectively as materials of the cell layers. The second structural body includes a first electrode, a second electrode and an insulating body positioned between the first electrode and the second electrode. The insulating body includes same material as a material of the first insulating layer, and has almost the same thickness as a thickness of the first insulating layer.