Invention Grant
- Patent Title: Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same
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Application No.: US15210867Application Date: 2016-07-14
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Publication No.: US10026751B2Publication Date: 2018-07-17
- Inventor: Titash Rakshit , Borna J. Obradovic , Rwik Sengupta , Wei-E Wang , Ryan Hatcher , Mark S. Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L23/522 ; H01L23/528 ; H01L29/24 ; H01L29/45 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L21/84 ; H01L29/10
Abstract:
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is M3 or higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include one or more transition metal dichalcogenide materials such as MoS2, WS2, WSe2, and/or combinations thereof.
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