Stacked SOI lateral bipolar transistor RF power amplifier and driver
Abstract:
An amplifier circuit including a substrate layer and a plurality of lateral bipolar junction transistors positioned entirely above the substrate. The lateral bipolar junction transistors include a plurality of monolithic emitter-collector regions coplanar to each other. Each of the emitter-collector regions is both an emitter region of a first bipolar junction transistor a collector region of a second bipolar junction transistor from the lateral bipolar junction transistors. Accordingly, the lateral bipolar junction transistors are electrically coupled in series circuit at the emitter-collector regions.
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