Invention Grant
- Patent Title: Stacked SOI lateral bipolar transistor RF power amplifier and driver
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Application No.: US15249430Application Date: 2016-08-28
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Publication No.: US10026752B2Publication Date: 2018-07-17
- Inventor: Alberto Valdes Garcia , Tak H. Ning , Jean-Olivier Plouchart , Ghavam G. Shahidi , Jeng-Bang Yau
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Louis J. Percello
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L23/535 ; H03F3/195 ; H03F3/213 ; H03F3/26

Abstract:
An amplifier circuit including a substrate layer and a plurality of lateral bipolar junction transistors positioned entirely above the substrate. The lateral bipolar junction transistors include a plurality of monolithic emitter-collector regions coplanar to each other. Each of the emitter-collector regions is both an emitter region of a first bipolar junction transistor a collector region of a second bipolar junction transistor from the lateral bipolar junction transistors. Accordingly, the lateral bipolar junction transistors are electrically coupled in series circuit at the emitter-collector regions.
Public/Granted literature
- US20180061853A1 STACKED SOI LATERAL BIPOLAR TRANSISTOR RF POWER AMPLIFIER AND DRIVER Public/Granted day:2018-03-01
Information query
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