Invention Grant
- Patent Title: Inductor device
-
Application No.: US15340683Application Date: 2016-11-01
-
Publication No.: US10026801B2Publication Date: 2018-07-17
- Inventor: Herb He Huang , Hongtao Ge , Haiting Li
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Shanghai CN Ningbo
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION
- Current Assignee Address: CN Shanghai CN Ningbo
- Agency: Anova Law Group, PLLC
- Priority: CN201410038081 20140126
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L49/02 ; H01L27/06 ; H01L21/768 ; H01L23/535 ; H01L29/06 ; H01L21/3105 ; H01L21/311 ; H01L21/02 ; H01L23/522
Abstract:
A semiconductor device includes an inductor disposed on a surface of an intermetallic dielectric layer at a location below which no virtual interconnect members are present. Thus, parasitic capacitance is reduced or eliminated and the Q value of the inductor is high.
Public/Granted literature
- US20170069707A1 INDUCTOR DEVICE Public/Granted day:2017-03-09
Information query
IPC分类:
