- Patent Title: Method of forming semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectric
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Application No.: US15338667Application Date: 2016-10-31
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Publication No.: US10026826B2Publication Date: 2018-07-17
- Inventor: Jean-Pierre Colinge , Carlos H. Diaz , Yeh Hsu , Tsung-Hsing Yu , Chia-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L29/06 ; H01L29/78 ; H01L21/225 ; H01L29/423
Abstract:
A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.
Public/Granted literature
- US20170047429A1 ASYMMETRIC SEMICONDUCTOR DEVICE Public/Granted day:2017-02-16
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