Invention Grant
- Patent Title: Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device
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Application No.: US14954661Application Date: 2015-11-30
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Publication No.: US10026843B2Publication Date: 2018-07-17
- Inventor: Che-Yu Lin , Ming-Hua Yu , Tze-Liang Lee , Chan-Lon Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/167 ; H01L29/66 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L21/762 ; H01L23/544
Abstract:
A method for manufacturing an active region of a semiconductor device includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the substrate. The top surface of the substrate is baked. An epitaxial layer is formed on the top surface of the substrate.
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