Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15168293Application Date: 2016-05-31
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Publication No.: US10026848B2Publication Date: 2018-07-17
- Inventor: Atsushi Umezaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-077955 20090327
- Main IPC: G09G5/00
- IPC: G09G5/00 ; H01L29/786 ; G09G3/20 ; G09G3/36 ; G11C19/28 ; H01L21/477 ; H01L27/12

Abstract:
One of the objects is to improve display quality by reduction in malfunctions of a circuit. In a driver circuit formed using a plurality of pulse output circuits having first to third transistors and first to fourth signal lines, a first clock signal is supplied to the first signal line; a preceding stage signal is supplied to the second signal line; a second clock signal is supplied to the third signal line; an output signal is output from the fourth signal line. Duty ratios of the first clock signal and the second clock signal are different from each other. A period during which the second clock signal is changed from an L-level signal to an H-level signal after the first clock signal is changed from an H-level signal to an L-level signal is longer than a period during which the preceding stage signal is changed from an L-level signal to an H-level signal.
Public/Granted literature
- US20160276490A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-09-22
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