Invention Grant
- Patent Title: Nitride white-light light-emitting diode
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Application No.: US15687458Application Date: 2017-08-26
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Publication No.: US10026867B2Publication Date: 2018-07-17
- Inventor: Jinjian Zheng , Huanrong Yang , Feilin Xun , Shutao Liao , Zhijie Li , Mingyue Wu , Chilun Chou , Feng Lin , Shuiqing Li , Junyong Kang
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201510689197 20151023
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/08 ; H01L33/44

Abstract:
A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.
Public/Granted literature
- US20170373221A1 Nitride White-light Light-Emitting Diode Public/Granted day:2017-12-28
Information query
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