Invention Grant
- Patent Title: Precessional spin current structure for MRAM
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Application No.: US15794871Application Date: 2017-10-26
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Publication No.: US10026892B2Publication Date: 2018-07-17
- Inventor: Mustafa Michael Pinarbasi , Michail Tzoufras , Bartlomiej Adam Kardasz
- Applicant: SPIN TRANSFER TECHNOLOGIES, INC.
- Applicant Address: US CA Fremont
- Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee: SPIN TRANSFER TECHNOLOGIES, INC.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/02 ; H01L43/10 ; G11C11/16 ; H01L29/82
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.
Public/Granted literature
- US20180047894A1 PRECESSIONAL SPIN CURRENT STRUCTURE FOR MRAM Public/Granted day:2018-02-15
Information query
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