Invention Grant
- Patent Title: Memristors with oxide switching layers
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Application No.: US15512141Application Date: 2014-09-30
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Publication No.: US10026894B2Publication Date: 2018-07-17
- Inventor: Ning Ge , Jianhua Yang , Zhiyong Li , Minxian Zhang , Katy Samuels
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- Agency: HP Inc. Patent Department
- International Application: PCT/US2014/058148 WO 20140930
- International Announcement: WO2016/053262 WO 20160407
- Main IPC: H01L45/00
- IPC: H01L45/00 ; B41J2/175

Abstract:
An example memristor includes a first conductive layer, a switching layer, and a second conductive layer. The first conductive layer may include a first conductive material and a second conductive material. The second conductive material may have a higher diffusivity than the first conductive material. The switching layer may be coupled to the first conductive layer and may include a first oxide having the first conductive material and a second oxide having the second conductive material. The second conductive layer may be coupled to the switching layer.
Public/Granted literature
- US20170279044A1 MEMRISTORS WITH OXIDE SWITCHING LAYERS Public/Granted day:2017-09-28
Information query
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