Invention Grant
- Patent Title: Negative electrode active material including first, second, and third regions and power storage device including the negative electrode active material
-
Application No.: US14714479Application Date: 2015-05-18
-
Publication No.: US10026959B2Publication Date: 2018-07-17
- Inventor: Nobuhiro Inoue , Kiyofumi Ogino
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2014-107441 20140523
- Main IPC: H01M4/13
- IPC: H01M4/13 ; H01M4/38 ; H01M4/48 ; H01M10/0525 ; H01G11/50 ; H01M4/134 ; H01M4/36 ; H01M10/052 ; H01G11/06 ; H01G11/24 ; H01M4/02

Abstract:
A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material includes a first region and a second region. The first region includes at least one element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second region includes oxygen and the same element as the one included in the first region. The crystallite size of the element included in the first region is larger than or equal to 1 nm and smaller than or equal to 10 nm.
Public/Granted literature
- US20150340691A1 NEGATIVE ELECTRODE ACTIVE MATERIAL AND POWER STORAGE DEVICE Public/Granted day:2015-11-26
Information query