A laser diode chip is described. In an embodiment the laser diode chip includes an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, wherein the active layer is in the form of a single quantum well structure. The single quantum well structure includes a quantum well layer, which is arranged between a first barrier layer and a second barrier layer, wherein the first barrier layer faces the n-type semiconductor region, and the second barrier layer faces the p-type semiconductor region. An electronic bandgap EQW of the quantum well layer is smaller than an electronic bandgap EB1 of the first barrier layer and smaller than an electronic bandgap EB2 of the second barrier layer, and the electronic bandgap EB1 of the first barrier layer is larger than the electronic bandgap EB2 of the second barrier layer.