Invention Grant
- Patent Title: Power amplification circuit
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Application No.: US15430890Application Date: 2017-02-13
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Publication No.: US10027291B2Publication Date: 2018-07-17
- Inventor: Satoshi Goto
- Applicant: MURATA MANUFACTURING CO., LTD.
- Applicant Address: JP Kyoto-fu
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP2016-071197 20160331
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/56 ; H03F3/21 ; H03F3/195 ; H03F3/24

Abstract:
A power amplification circuit that includes: a capacitor element in which a first metal layer, a first insulating layer, a second metal layer, a second insulating layer and a third metal layer are sequentially stacked, the capacitor element including a first capacitor in which the first metal layer serves as one electrode thereof and the second metal layer serves as another electrode thereof, and a second capacitor in which the second metal layer serves as one electrode thereof and the third metal layer serves as another electrode thereof; and a transistor that amplifies a radio-frequency signal. The radio-frequency signal is supplied to the one electrode of the first capacitor. The other electrode of the first capacitor and the one electrode of the second capacitor are connected to a base of the transistor, and the other electrode of the second capacitor is connected to the emitter of the transistor.
Public/Granted literature
- US20170288616A1 POWER AMPLIFICATION CIRCUIT Public/Granted day:2017-10-05
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