Invention Grant
- Patent Title: Transmission circuit with leakage prevention circuit
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Application No.: US15451417Application Date: 2017-03-07
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Publication No.: US10027318B2Publication Date: 2018-07-17
- Inventor: Heng-Chia Hsu
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu
- Agent Winston Hsu
- Priority: TW103124585A 20140717
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
A transmission circuit includes: a first transistor, a first current source, a third transistor. The first transistor has a source terminal coupled to a first reference voltage terminal of the transmission circuit and a drain terminal coupled to a first output terminal of the transmission circuit. The first current source is coupled between a gate terminal of the first transistor and a second reference voltage terminal of the transmission circuit. The third transistor has a drain terminal coupled to the first output terminal of the transmission circuit, a source terminal coupled to the second reference voltage terminal of the transmission circuit, and a gate terminal for receiving a first input signal. The first transistor is of a first conducting type, and the second transistor is of a second conducting type different from the first conducting type.
Public/Granted literature
- US20170179942A1 TRANSMISSION CIRCUIT WITH LEAKAGE PREVENTION CIRCUIT Public/Granted day:2017-06-22
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