Invention Grant
- Patent Title: High power radio frequency (RF) antenna switch
-
Application No.: US14262552Application Date: 2014-04-25
-
Publication No.: US10027366B2Publication Date: 2018-07-17
- Inventor: William L. Cagle , Toshikazu Tsukii
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H01P1/12 ; H01P1/15 ; H01P5/16 ; H03H7/46 ; H04L12/26 ; H04W52/52

Abstract:
A technology is provided for handling signals with defined power levels that are received at an antenna port. The signals can be received at a first antenna port, wherein the first antenna port is coupled to a plurality of PIN diodes positioned in parallel in between one or more transmission lines with a defined impedance. The defined power levels associated with the signals can be determined to exceed a predetermined threshold. The signals with the defined power levels that exceed the predetermined threshold can be redirected to a second antenna port, wherein the second antenna port is coupled to the plurality of PIN diodes positioned in parallel in between the one or more transmission lines with the defined impedance.
Public/Granted literature
- US20160365888A1 High Power Radio Frequency (RF) Antenna Switch Public/Granted day:2016-12-15
Information query