Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15715846Application Date: 2017-09-26
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Publication No.: US10032501B2Publication Date: 2018-07-24
- Inventor: Yutaka Ito , Yuan He
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Priority: JP2016-069963 20160331
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/408

Abstract:
A semiconductor device according to an aspect of the present invention has: a plurality of memory cells MC; a plurality of word lines WL each coupled to a corresponding one of the plurality of memory cells MC; and a control circuit that intermittently monitors accesses to the plurality of word lines WL, stores/erases some captured row-addresses in a first number of registers, and detects, by comparison with stored addresses, in response to a first number of accesses to one of the word lines WL in a first period of time. According to the present invention, access histories can be precisely analyzed by a small-scale circuit configuration, and measures against, for example, the Row Hammer problem, etc. can be taken.
Public/Granted literature
- US20180025770A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-01-25
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