Invention Grant
- Patent Title: Methods and apparatus for controlling plasma in a plasma processing system
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Application No.: US14792527Application Date: 2015-07-06
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Publication No.: US10032605B2Publication Date: 2018-07-24
- Inventor: John C. Valcore, Jr. , Bradford J. Lyndaker
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; B44C1/22 ; H05H1/24 ; H03L5/00 ; H05H1/46

Abstract:
Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.
Public/Granted literature
- US20150311041A1 Methods And Apparatus For Controlling Plasma In A Plasma Processing System Public/Granted day:2015-10-29
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