Invention Grant
- Patent Title: Trench MOSFET device and the preparation method thereof
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Application No.: US15197780Application Date: 2016-06-30
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Publication No.: US10032728B2Publication Date: 2018-07-24
- Inventor: Xiaobin Wang , Madhur Bobde , Paul Thorup
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agent Chen-Chi Lin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/00 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L21/265
Abstract:
A trench-type metal-oxide-semiconductor field-effect transistor (MOSFET) device and a fabrication method are disclosed. The trench MOSFET device comprises a semiconductor substrate of a first conductivity type. The semiconductor substrate has a plurality of first trenches arranged side by side in a first preset area of the semiconductor substrate extending along a first direction and a plurality of second trenches arranged side by side in a second preset area of the semiconductor substrate extending along a second direction perpendicular to the first direction. A control gate is formed in each of the pluralities of first and second trenches. A body region of a second conductivity type is formed at a top portion of the semiconductor substrate near sidewalls of the pluralities of first and second trenches. A source region of the first conductivity type is formed on a top portion of the body region.
Public/Granted literature
- US20180005959A1 TRENCH MOSFET DEVICE AND THE PREPARATION METHOD THEREOF Public/Granted day:2018-01-04
Information query
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