Invention Grant
- Patent Title: Integrated DC-DC power converters through face-to-face bonding
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Application No.: US15196884Application Date: 2016-06-29
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Publication No.: US10032750B2Publication Date: 2018-07-24
- Inventor: Hariklia Deligianni , Devendra K. Sadana , Edmund J. Sprogis , Naigang Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/065 ; H01L27/092 ; H01L21/8238 ; H01L21/48 ; H01L49/02

Abstract:
DC-DC power converters with GaN switches, magnetic inductors and CMOS power drivers integrated through face-to-face wafer bonding techniques are provided. In one aspect, an integrated DC-DC power converter includes: a Si CMOS chip having at least one Si CMOS transistor formed thereon; a GaN switch chip, bonded to the Si CMOS chip in a face-to-face manner, having at least one GaN transistor formed thereon; and an on-chip magnetic inductor present either on the Si CMOS chip or on the GaN switch chip. A method of forming an integrated DC-DC power converter is also provided.
Public/Granted literature
- US20180005988A1 Integrated DC-DC Power Converters Through Face-to-Face Bonding Public/Granted day:2018-01-04
Information query
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