A static random access memory (SRAM) cell includes first through fourth transistors being first type transistors and fifth and sixth transistors being second type transistors. Source regions of the first and second transistors are formed by a first source diffusion region, source regions of the fifth and sixth transistors are formed by second and third source diffusion regions, respectively, and source regions of the third and fourth transistors are formed by a fourth source diffusion region. The SRAM cell further includes a first data storage electrode linearly extending from a first gate line of the third and sixth transistors and electrically connecting the first gate line and the first and second source diffusion regions, and a second data storage electrode linearly extending from a second gate line of the second and fifth transistors and electrically connecting the second gate line and the third and fourth source diffusion regions.